| Capacity |
1 TB |
| Form Factor |
M.2 2280 (80 × 22 × 2.3 mm) |
| Interface |
PCIe Gen 4.0 ×4, NVMe 2.0 |
| Sequential Read Speed |
Up to 7,450 MB/s |
| Sequential Write Speed |
Up to 6,900 MB/s |
| Random Read (4KB, QD32) |
Up to 1,200,000 IOPS |
| Random Write (4KB, QD32) |
Up to 1,550,000 IOPS |
| Cache (DRAM) |
1 GB Low-Power DDR4 SDRAM |
| NAND Type |
Samsung V-NAND 3-bit MLC |
| Operating Temp |
0 – 70 °C |
| Shock Resistance |
1,500 G / 0.5 ms (half-sine) |
| Power Consumption (Active) |
~5.4 W (System level average), up to ~7.8 W (burst) |
| Power Consumption (Idle) |
Max ~50 mW |
| MTBF |
1.5 million hours |
| Security / Encryption |
AES-256 bit, TCG Opal, IEEE-1667 |