Capacity |
1 TB |
Form Factor |
M.2 2280 (80 × 22 × 2.3 mm) |
Interface |
PCIe Gen 4.0 ×4, NVMe 2.0 |
Sequential Read Speed |
Up to 7,450 MB/s |
Sequential Write Speed |
Up to 6,900 MB/s |
Random Read (4KB, QD32) |
Up to 1,200,000 IOPS |
Random Write (4KB, QD32) |
Up to 1,550,000 IOPS |
Cache (DRAM) |
1 GB Low-Power DDR4 SDRAM |
NAND Type |
Samsung V-NAND 3-bit MLC |
Operating Temp |
0 – 70 °C |
Shock Resistance |
1,500 G / 0.5 ms (half-sine) |
Power Consumption (Active) |
~5.4 W (System level average), up to ~7.8 W (burst) |
Power Consumption (Idle) |
Max ~50 mW |
MTBF |
1.5 million hours |
Security / Encryption |
AES-256 bit, TCG Opal, IEEE-1667 |