| Specification | Details |
|---|---|
| Brand | Samsung |
| Model | 990 EVO Plus |
| Capacity | 1TB |
| Form Factor | M.2 2280 |
| Interface | PCIe Gen 4.0 x4 / NVMe 2.0 |
| Sequential Read Speed | Up to 5,000 MB/s |
| Sequential Write Speed | Up to 4,200 MB/s |
| Random Read (4KB, QD32) | Up to 700,000 IOPS |
| Random Write (4KB, QD32) | Up to 800,000 IOPS |
| NAND Flash | Samsung V-NAND 3-bit TLC |
| Controller | Samsung In-house Controller |
| Cache Memory | 1 GB Low-Power DDR4 SDRAM |
| Dimensions | 80.15 × 22.15 × 2.38 mm |
| Weight | Approx. 9 g |
| Power Consumption (Active) | ≈ 4.9 W average |
| Idle Power Consumption | ≈ 40 mW maximum |
| Operating Temperature | 0°C to 70°C |
| Shock Resistance | 1,500 G, 0.5 ms half-sine |
| MTBF (Mean Time Between Failures) | 1.5 Million Hours |