| Specification | Details |
|---|---|
| Brand | Samsung |
| Model | 990 PRO with Heatsink |
| Capacity | 4TB |
| Form Factor | M.2 2280 |
| Interface | PCIe Gen 4.0 x4 / NVMe 2.0 |
| Sequential Read Speed | Up to 7,450 MB/s |
| Sequential Write Speed | Up to 6,900 MB/s |
| Random Read (4KB, QD32) | Up to 1,600,000 IOPS |
| Random Write (4KB, QD32) | Up to 1,550,000 IOPS |
| NAND Flash | Samsung V-NAND 3-bit TLC |
| Controller | Samsung In-house Controller |
| Cache Memory | 4 GB Low-Power DDR4 SDRAM |
| Dimensions (with heatsink) | 80.15 × 25 × 8.88 mm |
| Weight | Approx. 28 g |
| Power Consumption (Active) | ≈ 6.5 W average, up to ≈ 8.5 W burst |
| Idle Power Consumption | ≈ 55 mW maximum |
| Operating Temperature | 0°C to 70°C |
| Shock Resistance | 1,500 G, 0.5 ms half-sine |
| MTBF (Mean Time Between Failures) | 1.5 Million Hours |