Capacity |
2 TB |
Form Factor |
M.2 2280 (80 × 22 × 2.3 mm) |
Interface |
PCIe 4.0 ×4, NVMe 2.0 |
Sequential Read Speed |
Up to 7,450 MB/s |
Sequential Write Speed |
Up to 6,900 MB/s |
Random Read (4-KB, QD32) |
Up to 1,400,000 IOPS |
Random Write (4-KB, QD32) |
Up to 1,550,000 IOPS |
Cache / DRAM |
2 GB Low-Power DDR4 SDRAM |
NAND Type |
Samsung V-NAND 3-bit MLC |
Weight |
Max ~9.0 g |
Power Consumption (Active) |
Average ~5.5 W, Burst up to ~8.5 W |
Idle Power |
Max ~55 mW |
Operating Temperature |
0 °C to +70 °C |
Shock Resistance |
1,500 G / 0.5 ms (half-sine) |
MTBF |
1.5 million hours |